Plasma-Therm - Heatpulse™ Rapid Thermal Processing System
Plasma-Therm’s Heatpulse RTP is a newly released rapid thermal processing (RTP) system capable of processing diverse materials in a variety of substrate sizes.
Rapid thermal processing (RTP) can be used in a multitude of semiconductor process steps, such as post-implant annealing, growth of oxide and nitride films, reflow, and formation of silicides, salicides, and metal alloys. In a single-wafer chamber, wafers are rapidly heated and held at a closed-loop controlled temperature. The Heatpulse RTP system can process a variety of substrates, such as silicon, silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), quartz, and sapphire.
In addition, Plasma-Therm also supports the AG Heatpulse 8108 and 8800 legacy systems with spare parts, field service, and upgrades.
Plasma-Therm’s Heatpulse RTP is a newly released rapid thermal processing (RTP) system capable of processing diverse materials in a variety of substrate sizes.
Rapid thermal processing (RTP) can be used in a multitude of semiconductor process steps, such as post-implant annealing, growth of oxide and nitride films, reflow, and formation of silicides, salicides, and metal alloys. In a single-wafer chamber, wafers are rapidly heated and held at a closed-loop controlled temperature. The Heatpulse RTP system can process a variety of substrates, such as silicon, silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), quartz, and sapphire.
In addition, Plasma-Therm also supports the AG Heatpulse 8108 and 8800 legacy systems with spare parts, field service, and upgrades.
Plasma-Therm’s Heatpulse RTP is a newly released rapid thermal processing (RTP) system capable of processing diverse materials in a variety of substrate sizes.
Rapid thermal processing (RTP) can be used in a multitude of semiconductor process steps, such as post-implant annealing, growth of oxide and nitride films, reflow, and formation of silicides, salicides, and metal alloys. In a single-wafer chamber, wafers are rapidly heated and held at a closed-loop controlled temperature. The Heatpulse RTP system can process a variety of substrates, such as silicon, silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), quartz, and sapphire.
In addition, Plasma-Therm also supports the AG Heatpulse 8108 and 8800 legacy systems with spare parts, field service, and upgrades.
This equipment is advertised on behalf of Plasma-Therm LLC