Corial - 210IL ICP-RIE Etch System (+ALE, DRIE)
Get maximum flexibility with the only 200mm etch system with the capability to support ICP, RIE, ALE and DRIE technologies in the SAME reactor. The Corial 210IL is designed for R&D and low volume production, and offers a wide range of applications for the specialty semiconductor market.
This etcher is based on Corial's latest generation of inductively coupled plasma reactor. The system features high density plasma, helical antenna, 2 MHz ICP RF generator and quartz liner, enabling high etch rates and excellent uniformities. Featuring a vacuum load lock, it also ensures stable process conditions and short pumping cycles, and offers the capability to run fluorinated and chlorinated chemistries in the same process recipe.
In addition, the Corial 210IL ICP-RIE system can process a wide range of materials including silicon, oxides, nitrides, polymers, metals, III-V & II-VI compound semiconductors, and hard materials. When equipped with a 2 kW ICP source, the 210IL enables deep reactive ion etching of hard materials as Al2O3, SiC, LiTaO3, sapphire and glass.
With the CORTEX Pulse software, pulsed or time-multiplexed processes can also be applied for Atomic Layer Etching (ALE) and deep silicon etch (DRIE) on the conventional Corial 210IL ICP-RIE system.
Get maximum flexibility with the only 200mm etch system with the capability to support ICP, RIE, ALE and DRIE technologies in the SAME reactor. The Corial 210IL is designed for R&D and low volume production, and offers a wide range of applications for the specialty semiconductor market.
This etcher is based on Corial's latest generation of inductively coupled plasma reactor. The system features high density plasma, helical antenna, 2 MHz ICP RF generator and quartz liner, enabling high etch rates and excellent uniformities. Featuring a vacuum load lock, it also ensures stable process conditions and short pumping cycles, and offers the capability to run fluorinated and chlorinated chemistries in the same process recipe.
In addition, the Corial 210IL ICP-RIE system can process a wide range of materials including silicon, oxides, nitrides, polymers, metals, III-V & II-VI compound semiconductors, and hard materials. When equipped with a 2 kW ICP source, the 210IL enables deep reactive ion etching of hard materials as Al2O3, SiC, LiTaO3, sapphire and glass.
With the CORTEX Pulse software, pulsed or time-multiplexed processes can also be applied for Atomic Layer Etching (ALE) and deep silicon etch (DRIE) on the conventional Corial 210IL ICP-RIE system.
Get maximum flexibility with the only 200mm etch system with the capability to support ICP, RIE, ALE and DRIE technologies in the SAME reactor. The Corial 210IL is designed for R&D and low volume production, and offers a wide range of applications for the specialty semiconductor market.
This etcher is based on Corial's latest generation of inductively coupled plasma reactor. The system features high density plasma, helical antenna, 2 MHz ICP RF generator and quartz liner, enabling high etch rates and excellent uniformities. Featuring a vacuum load lock, it also ensures stable process conditions and short pumping cycles, and offers the capability to run fluorinated and chlorinated chemistries in the same process recipe.
In addition, the Corial 210IL ICP-RIE system can process a wide range of materials including silicon, oxides, nitrides, polymers, metals, III-V & II-VI compound semiconductors, and hard materials. When equipped with a 2 kW ICP source, the 210IL enables deep reactive ion etching of hard materials as Al2O3, SiC, LiTaO3, sapphire and glass.
With the CORTEX Pulse software, pulsed or time-multiplexed processes can also be applied for Atomic Layer Etching (ALE) and deep silicon etch (DRIE) on the conventional Corial 210IL ICP-RIE system.
This equipment is advertised on behalf of Corial