Corial - 210D Inductively Coupled Plasma/ICP-CVD System
High quality films deposition at low temperature, adaptable to a wide range of substrate sizes.
The Corial 210D ICP-CVD high density system is ideal for R&D centres, and offers a wide range of applications for the specialty semiconductor markets. It is based on the company's latest generation of 2 MHz helical ICP reactor. It is equipped with separate gas injection for SiH4 and dopants, to deposit high quality SiO2, Si3N4, SiOCH, SiOF, SiC and aSi-H films at low temperature (<150°C). High-temperature reactor walls supports short plasma cleaning times and low added particles, whilst its vacuum load lock can help to deliver stable process conditions and short pump-down times. In addition, Corial's COSMA Pulse software enables pulsed or time-multiplexed processes to support applications ranging from deposition of super lattices for stress relief, to Atomic Layer Deposition films - these are all available on a conventional 210D.
High quality films deposition at low temperature, adaptable to a wide range of substrate sizes.
The Corial 210D ICP-CVD high density system is ideal for R&D centres, and offers a wide range of applications for the specialty semiconductor markets. It is based on the company's latest generation of 2 MHz helical ICP reactor. It is equipped with separate gas injection for SiH4 and dopants, to deposit high quality SiO2, Si3N4, SiOCH, SiOF, SiC and aSi-H films at low temperature (<150°C). High-temperature reactor walls supports short plasma cleaning times and low added particles, whilst its vacuum load lock can help to deliver stable process conditions and short pump-down times. In addition, Corial's COSMA Pulse software enables pulsed or time-multiplexed processes to support applications ranging from deposition of super lattices for stress relief, to Atomic Layer Deposition films - these are all available on a conventional 210D.
High quality films deposition at low temperature, adaptable to a wide range of substrate sizes.
The Corial 210D ICP-CVD high density system is ideal for R&D centres, and offers a wide range of applications for the specialty semiconductor markets. It is based on the company's latest generation of 2 MHz helical ICP reactor. It is equipped with separate gas injection for SiH4 and dopants, to deposit high quality SiO2, Si3N4, SiOCH, SiOF, SiC and aSi-H films at low temperature (<150°C). High-temperature reactor walls supports short plasma cleaning times and low added particles, whilst its vacuum load lock can help to deliver stable process conditions and short pump-down times. In addition, Corial's COSMA Pulse software enables pulsed or time-multiplexed processes to support applications ranging from deposition of super lattices for stress relief, to Atomic Layer Deposition films - these are all available on a conventional 210D.
This equipment is advertised on behalf of Corial